Document Type
Article
Publication Date
1994
Publication Title
Journal of Applied Physics
Volume
75
Issue
8
Pages
4016-4021
DOI
10.1063/1.356024
Abstract
We have performed Monte Carlo simulations to obtain the field dependence of electronic trapping across repulsive potentials in GaAs. Such repulsive centers are associated with deep level impurities having multiply charged states. Our results reveal a field‐dependent maxima in the electronic capture coefficient, and the overall shape is seen to depend on the background electron density due to the effects of screening. Based on the Monte Carlo calculations, we have examined the stability of compensated semiconductors containing such repulsive centers. Our analysis indicates a potential for low frequency charge oscillations which is in keeping with available experimental data.
Original Publication Citation
Joshi, R. P., Schoenbach, K. H., & Raha, P. K. (1994). Impact of field‐dependent electronic trapping across Coulomb repulsive potentials on low frequency charge oscillations. Journal of Applied Physics, 75(8), 4016-4021. doi:10.1063/1.356024
Repository Citation
Joshi, R. P.; Schoenbach, K. H.; and Raha, P. K., "Impact of Field-Dependent Electronic Trapping Across Coulomb Repulsive Potentials on Low Frequency Charge Oscillations" (1994). Bioelectrics Publications. 245.
https://digitalcommons.odu.edu/bioelectrics_pubs/245
ORCID
0000-0001-7867-7773 (Schoenbach)
Comments
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Applied Physics 75 (8) 4016-4021 and may be found at https://aip.scitation.org/doi/abs/10.1063/1.356024.