Date of Award

Fall 1990

Document Type

Thesis

Degree Name

Master of Science (MS)

Department

Electrical & Computer Engineering

Program/Concentration

Electrical Engineering

Committee Director

V. K. Lakdawala

Committee Member

Karl H. Schoenbach

Committee Member

Hasan H. Erkaya

Call Number for Print

Special Collections LD4331.E55B36

Abstract

The goal of this research was to investigate deep levels in different types of GaAs, a material for high power optically controlled bulk semiconductor switches. For low resistivity semiconductors, such as silicon doped GaAs material (p =0.054 Ω cm), deep level transient spectroscopy (DLTS) was used to characterize deep levels. Three deep levels (EL6, EL3, and EL2) have been detected in this material. For high resistivity semiconductors (p > 104 Ω cm), difficulty of electrical carrier injection and of making a junction does not permit the use of DLTS technique. Therefore, an experimental set-up of the photo-induced current transient spectroscopy (PICTS), using rate window concept, has been developed. One copper related trap (CuB) in copper doped intrinsic GaAs (GaAs:Cu) and at least two copper related traps in copper compensated, silicon doped GaAs (GaAs:Si:Cu) were detected. Theoretical analysis and experimental results obtained by one another variation of PICTS-the curve fitting on single shot photo-induced current transient-indicate that this technique can be utilized to separate closely spaced deep levels in the forbidden gap.

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DOI

10.25777/8y9j-ar24

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