Date of Award
Fall 1990
Document Type
Thesis
Degree Name
Master of Science (MS)
Department
Electrical & Computer Engineering
Program/Concentration
Electrical Engineering
Committee Director
Karl Schoenbach
Committee Member
R. Joshi
Committee Member
Vishnu K. Lakdawala
Call Number for Print
Special Collections LD4331.E55R68
Abstract
During the past few years, bulk, photoconductive switching has become recognized as a viable topic for future research on moderate and high power switches. The two-pulse, or BOSS, concept relies on an excitation laser pulse, and a separate de-excitation pulse in conjunction with silicon doped, copper compensated, GaAs to create a variable temporal electrical pulse width. The research contained in this document provides information concerning the feasibility of the BOSS concept, as the switch is scaled to larger sizes, and higher voltage and current. The major concern will be the high voltage and current effects. The absorption length for 1064 nm laser light in GaAs has been determined in order to design contacts that allows for maximum voltage hold-off. At higher voltages, an effect known as lock-on has been observed and is extensively studied here. Specifically, the temporal development of the dark lock-on current, and infrared quenching of lock-on currents will be addressed. Results of experimental and theoretical studies on thermal effects and steady-state dark current-voltage curves are presented. Experiments demonstrating infrared quenching of lock-on currents have been conducted.
Rights
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DOI
10.25777/y9a3-ac47
Recommended Citation
Roush, Randy.
"Optical and High Electric Field Effects in Bulk Gallium Arsenide Switches"
(1990). Master of Science (MS), Thesis, Electrical & Computer Engineering, Old Dominion University, DOI: 10.25777/y9a3-ac47
https://digitalcommons.odu.edu/ece_etds/500
Included in
Electronic Devices and Semiconductor Manufacturing Commons, Semiconductor and Optical Materials Commons