Document Type

Article

Publication Date

5-2017

DOI

10.1109/led.2017.2696002

Publication Title

IEEE Electron Device Letters

Volume

38

Issue

6

Pages

736-739

Abstract

The stochastic nature of the conductive filaments in oxide-based resistive memory (RRAM) represents a sizeable impediment to commercialization. As such, program-verify methodologies are highly alluring. However, it was recently shown that program-verify methods are unworkable due to strong resistance state relaxation after SET/RESET programming. In this paper, we demonstrate that resistance state relaxation is not the main culprit. Instead, it is fluctuation-induced false-reading (triggering) that defeats the program-verify method, producing a large distribution tail immediately after programming. The fluctuation impact on the verify mechanism has serious implications on the overall write/erase speed of RRAM.

Comments

NOTE: NIST Author Manuscript

Published in final edited form as:

IEEE Electron Device Lett. 2017 June ; 38(6): 736–739. doi:10.1109/LED.2017.2696002.

Original Publication Citation

Nminibapiel, D. M., Veksler, D., Kim, J.-H., Shrestha, P. R., Campbell, J. P., Ryan, J. T., … Cheung, K. P. (2017). Impact of RRAM Read Fluctuations on the Program-Verify Approach. IEEE Electron Device Letters : A Publication of the IEEE Electron Devices Society, 38(6), 736–739. http://doi.org/10.1109/LED.2017.2696002

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