Document Type
Article
Publication Date
5-2017
DOI
10.1109/led.2017.2696002
Publication Title
IEEE Electron Device Letters
Volume
38
Issue
6
Pages
736-739
Abstract
The stochastic nature of the conductive filaments in oxide-based resistive memory (RRAM) represents a sizeable impediment to commercialization. As such, program-verify methodologies are highly alluring. However, it was recently shown that program-verify methods are unworkable due to strong resistance state relaxation after SET/RESET programming. In this paper, we demonstrate that resistance state relaxation is not the main culprit. Instead, it is fluctuation-induced false-reading (triggering) that defeats the program-verify method, producing a large distribution tail immediately after programming. The fluctuation impact on the verify mechanism has serious implications on the overall write/erase speed of RRAM.
Original Publication Citation
Nminibapiel, D. M., Veksler, D., Kim, J.-H., Shrestha, P. R., Campbell, J. P., Ryan, J. T., … Cheung, K. P. (2017). Impact of RRAM Read Fluctuations on the Program-Verify Approach. IEEE Electron Device Letters : A Publication of the IEEE Electron Devices Society, 38(6), 736–739. http://doi.org/10.1109/LED.2017.2696002
Repository Citation
Nminibapiel, David M.; Veksler, Dmitry; Kim, J.-H.; Shrestha, Pragya R.; Campbell, Jason P.; Ryan, Jason T.; Baumgart, Helmut; and Cheung, Kin P., "Impact of RRAM Read Fluctuations on the Program-Verify Approach" (2017). Electrical & Computer Engineering Faculty Publications. 123.
https://digitalcommons.odu.edu/ece_fac_pubs/123
Comments
NOTE: NIST Author Manuscript
Published in final edited form as:
IEEE Electron Device Lett. 2017 June ; 38(6): 736–739. doi:10.1109/LED.2017.2696002.