Document Type
Article
Publication Date
2015
DOI
10.1149/2.0031507jss
Publication Title
ECS Journal of Solid State Science and Technology
Volume
4
Issue
7
Pages
P190-P194
Abstract
Bonding of lift off resist (LOR) was performed to realize temporary wafer bonding without residue. Bonding process conditions such as spin speed, pre-bake temperature, and bonding temperature were optimized to obtain a large bonded area with high bond strength. Under optimized process conditions, a bonded area covering over 98% of the wafer surface, with a room temperature bond strength of nearly 5 J/m2 is achieved. During razor blade testing, fracture often occurs at the Si wafer. Moreover, debonding using an N-Methyl-2-pyrrolidone (NMP)-based solvent left the wafer surface extremely small amount of residue. Thus, the optimized bonding processed developed in this research is suitable for a clean temporary bonding process.
Original Publication Citation
Matsumae, T., Koehler, A. D., Greenlee, J. D., Anderson, T. J., Baumgart, H., Jernigan, G. G., . . . Kub, F. J. (2015). Temporary bonding with polydimethylglutarimide based lift off resist as a layer transfer platform. ECS Journal of Solid State Science and Technology, 4(7), P190-P194. doi:10.1149/2.0031507jss
Repository Citation
Matsumae, T.; Koehler, A. D.; Greenlee, J. D.; Anderson, T. J.; Baumgart, H.; Jernigan, G. G.; Hobart, K. D.; and Kub, F. J., "Temporary Bonding with Polydimethylglutarimide Based Lift Off Resist as a Layer Transfer Platform" (2015). Electrical & Computer Engineering Faculty Publications. 146.
https://digitalcommons.odu.edu/ece_fac_pubs/146
Comments
This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any medium, provided the original work is properly cited.