Document Type

Article

Publication Date

2003

DOI

10.1063/1.1562734

Publication Title

Journal of Applied Physics

Volume

93

Issue

8

Pages

4836-4842

Abstract

Monte Carlo studies of transferred electron oscillators based on bulk wurtzite GaN are presented. Two structures have been examined: (i) devices with the conventional single notch structure, and (ii) repetitive structures with serial segments to fashion a "multiple domain" device. Wurtzite material has been chosen because of the higher drift velocity and because analytical expressions for the band structure have recently become available. Performance parameters of interest such as the operating frequency, output power, and conversion efficiency are calculated. Variations due to changes in temperature, biasing voltage, and device length are also included. It is shown that multidomain Gunn diodes can lead to significant improvements in output power over conventional, single-transit structure, and so such multiple GaN diodes merit serious experimental study.

Comments

"Under the terms of its License to Publish Agreement, AIP Publishing grants the Author(s) of papers submitted to or published in one of AIP Publishing journals or conference proceedings the following rights: The right to Deposit the VOR in a repository in compliance with university or funder requirements 12 months after publication by AIP Publishing."

© American Institute of Physics

Originally published as:

Joshi, R. P., Sridhara, V., Shah, P., & Rosario, R. D. d. (2003). Monte Carlo analysis of GaN-based Gunn oscillators for microwave power generation. Journal of Applied Physics, 93(8), 4836-4842. doi:10.1063/1.1562734

Available at: http://dx.doi.org/10.1063/1.1562734

Original Publication Citation

Joshi, R. P., Sridhara, V., Shah, P., & Rosario, R. D. d. (2003). Monte Carlo analysis of GaN-based Gunn oscillators for microwave power generation. Journal of Applied Physics, 93(8), 4836-4842. doi:10.1063/1.1562734

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