Document Type

Article

Publication Date

1990

DOI

10.1063/1.102496

Publication Title

Applied Physics Letters

Volume

56

Issue

15

Pages

1454-1456

Abstract

Hydrogen passivation of deep traps in diamond is demonstrated. Current‐voltage (IV) characteristics of polycrystalline thin film and bulk diamond were studied before and after hydrogenation. On hydrogenation, all the samples showed several orders of magnitude increase in conductivity. Hydrogenation was carried out under controlled conditions to study the changes in the IV characteristics of the samples. The concentration of uncompensated traps was varied systematically by hydrogenation. The concentration of electrically active hydrogen was determined from the IV data. It is shown that hydrogenation is an alternative to deep‐level transient spectroscopy, suitable for characterization of traps in a wide‐band‐gap material like diamond.

Comments

The following article appeared in

Albin, S., & Watkins, L. (1990). Electrical properties of hydrogenated diamond. Applied Physics Letters, 56(15), 1454-1456. doi:10.1063/1.102496

and may be found at: http://dx.doi.org/10.1063/1.102496.

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.

Original Publication Citation

Albin, S., & Watkins, L. (1990). Electrical properties of hydrogenated diamond. Applied Physics Letters, 56(15), 1454-1456. doi:10.1063/1.102496

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