Document Type
Article
Publication Date
1990
DOI
10.1063/1.102496
Publication Title
Applied Physics Letters
Volume
56
Issue
15
Pages
1454-1456
Abstract
Hydrogen passivation of deep traps in diamond is demonstrated. Current‐voltage (I‐V) characteristics of polycrystalline thin film and bulk diamond were studied before and after hydrogenation. On hydrogenation, all the samples showed several orders of magnitude increase in conductivity. Hydrogenation was carried out under controlled conditions to study the changes in the I‐V characteristics of the samples. The concentration of uncompensated traps was varied systematically by hydrogenation. The concentration of electrically active hydrogen was determined from the I‐V data. It is shown that hydrogenation is an alternative to deep‐level transient spectroscopy, suitable for characterization of traps in a wide‐band‐gap material like diamond.
Original Publication Citation
Albin, S., & Watkins, L. (1990). Electrical properties of hydrogenated diamond. Applied Physics Letters, 56(15), 1454-1456. doi:10.1063/1.102496
Repository Citation
Albin, Sacharia and Watkins, Linwood, "Electrical Properties of Hydrogenated Diamond" (1990). Electrical & Computer Engineering Faculty Publications. 190.
https://digitalcommons.odu.edu/ece_fac_pubs/190
Comments
The following article appeared in
Albin, S., & Watkins, L. (1990). Electrical properties of hydrogenated diamond. Applied Physics Letters, 56(15), 1454-1456. doi:10.1063/1.102496
and may be found at: http://dx.doi.org/10.1063/1.102496.
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.