Document Type

Article

Publication Date

1999

DOI

10.1002/(sici)1521-396x(199907)174:1<213::Aid-pssa213>3.0.Co;2-8

Publication Title

Physica Status Solidi (A) Applications and Materials Science

Volume

174

Issue

1

Pages

213-220

Abstract

Thin layers of Cu/Al/Se/Al/Cu/Al/Se/…/Al/Se sequentially deposited have been annealed half an hour at 855 K. CuAlSe2 thin films crystallized in the chalcopyrite structure are obtained. The films being contaminated by oxygen, the experimental deposition conditions of the aluminum layer have been improved in order to decrease the atomic concentration of oxygen below 5 at%. Such results can be obtained in vacuum of 10-4 Pa, when the aluminum deposition rate is 1 nm/s and when the layer is immediately covered after deposition. Films obtained in such a way are nearly stoichiometric with lattice parameters in accordance with the expected ones (a = 0.5607 nm, c = 1.0986 nm). As shown by scanning electron microscope the averaged crystallite diameter is about 0.6 μm. The forbidden gap deduced from optical measurements is evaluated at 2.67 eV which corresponds to single crystal value.

Original Publication Citation

El Moctar, C. O., Marsillac, S., Bernede, J. C., Conan, A., Benchouk, K., & Khelil, A. (1999). Réalisation de couches minces de CuAlSe2 par recuit de feuilllets superposés Cu/Al/Se/Al…, étude de conditions de dépôt. Physica Status Solidi (A) Applications and Materials Science, 174(1), 213-220. doi:10.1002/(sici)1521-396x(199907)174:13.0.Co;2-8

ORCID

0000-0003-0826-8119 (Marsillac)

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