Document Type

Article

Publication Date

2012

DOI

10.1063/1.4769902

Publication Title

Applied Physics Letters

Volume

101

Issue

23 (231910)

Pages

231910-1-231910-4

Abstract

In situ and ex situ characterization methods have been applied to investigate the properties of (Ag,Cu)InSe2 (ACIS) thin films. Data acquired from real time spectroscopic ellipsometry (RTSE) experiments were analyzed to extract the evolution of the nucleating, bulk, and surface roughness layer thicknesses. The evolution of these layer thicknesses suggests a transition from Volmer-Weber to Stranski-Krastanov type behavior when Cu is replaced by Ag. The complex dielectric functions of ACIS at both deposition and room temperature as a function of film composition were also extracted from the RTSE data, enabling parameterization of the alloy optical properties.

Original Publication Citation

Little, S.A., Ranjan, V., Collins, R.W., & Marsillac, S. (2012). Growth analysis of (Ag,Cu)InSe2 thin films via real time spectroscopic ellipsometry. Applied Physics Letters, 101(23 (231910)), 1-4. doi: 10.1063/1.4769902

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