Document Type
Article
Publication Date
1997
DOI
10.1051/jp3:1997249
Publication Title
Journal de Physique III
Volume
7
Issue
11
Pages
2165-2169
Abstract
CuAlSe2 thin films have been synthesized by chalcogenization of thin Cu and Al layers sequentially deposited by evaporation under vacuum. It is shown that CuAlSe2 films are obtained with some Cu2-δSe and Se phases present at the surface. These surface phases are suppressed by annealing under vacuum and by chemical etching in a KCN solution. At the end of the process, the XRD spectrum demonstrates that textured CuAlSe2 films have been obtained with preferential orientation of the crystallites along the (112) direction. The gap of the films is 2.7 eV as expected. The films are nearly stoichiometric, but their surface is quite rough. The XPS spectra show that some Na diffuses from the substrate toward the surface during the annealing process. However, this Na is etched by KCN.
Original Publication Citation
Marsillac, S., Benchouk, K., El Moctar, C., Bernede, J. C., Pouzet, J., Khellil, A., & Jamali, M. (1997). CuAlSe² thin films obtained by chalcogenization. Journal de physique. III, 7(11), 2165-2169. doi:10.1051/jp3:1997249
Repository Citation
Marsillac, S.; Benchouk, K.; Moctar, C. El; Bernède, J. C.; Pouzet, J.; Khellil, A; and Jamali, M., "CuAlSe² Thin Films Obtained by Chalcogenization" (1997). Electrical & Computer Engineering Faculty Publications. 211.
https://digitalcommons.odu.edu/ece_fac_pubs/211
ORCID
0000-0003-0826-8119 (Marsillac)
Included in
Electronic Devices and Semiconductor Manufacturing Commons, Semiconductor and Optical Materials Commons
Comments
© EDP Sciences 1997.
Included with kind permission of The Journal de Physique III.
Publisher's version available at: https://doi.org/10.1051/jp3:1997249