Document Type

Article

Publication Date

1997

DOI

10.1051/jp3:1997249

Publication Title

Journal de Physique III

Volume

7

Issue

11

Pages

2165-2169

Abstract

CuAlSe2 thin films have been synthesized by chalcogenization of thin Cu and Al layers sequentially deposited by evaporation under vacuum. It is shown that CuAlSe2 films are obtained with some Cu2-δSe and Se phases present at the surface. These surface phases are suppressed by annealing under vacuum and by chemical etching in a KCN solution. At the end of the process, the XRD spectrum demonstrates that textured CuAlSe2 films have been obtained with preferential orientation of the crystallites along the (112) direction. The gap of the films is 2.7 eV as expected. The films are nearly stoichiometric, but their surface is quite rough. The XPS spectra show that some Na diffuses from the substrate toward the surface during the annealing process. However, this Na is etched by KCN.

Comments

© EDP Sciences 1997.

Included with kind permission of The Journal de Physique III.

Publisher's version available at: https://doi.org/10.1051/jp3:1997249

Original Publication Citation

Marsillac, S., Benchouk, K., El Moctar, C., Bernede, J. C., Pouzet, J., Khellil, A., & Jamali, M. (1997). CuAlSe² thin films obtained by chalcogenization. Journal de physique. III, 7(11), 2165-2169. doi:10.1051/jp3:1997249

ORCID

0000-0003-0826-8119 (Marsillac)

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