Document Type

Conference Paper

Publication Date

2001

Publication Title

Proceedings of the Sixth Applied Diamond Conference/ Second Frontier Carbon Technology Joint Conference (ADC/FCT 2001)

Pages

275-278

Conference Name

Sixth Applied Diamond Conference/ Second Frontier Carbon Technology Joint Conference (ADC/FCT 2001), 6-10 August 2001, Auburn, AL; United States

Abstract

Conducting epitaxial diamond films of high quality are essential for many diamond studies and diamond electronic device fabrication. We have grown boron-doped epitaxial diamond films on type Ila natural diamond (100) substrates by microwave plasma chemical vapor deposition. A gas mixture of H2/CH4 was used. Boron doping was done by placing solid sources of pure boron in the microwave plasma. Homoepitaxial films with atomic smoothness were achieved under the following growth conditions: substrate temperature 900 °C, gas pressure 40 Torr, and gas flow rates of H2/CH4 = 900/7.2 seem. The growth rate was 0.87 µm/hr. Surfaces of the homoepitaxial films were studied by scanning tunneling microscopy (STM). STM images show smooth and continuous surface with ripple-like features on micrometer scale. On nanometer scale, alternating terraces of 2x1 and 1x2 dimerization were clearly observed.

Comments

Per the NASA Technical Reports Server, this document has no copyright. Distribution limits are unclassified, publicly available, and unlimited.

https://creativecommons.org/publicdomain/zero/1.0/

Original Publication Citation

Xiao, B., Fu, W., Albin, S., Moulton, J., & Cooper, J. (2001). Boron-doped homoepitaxial (100) diamond film investigated by scanning tunneling microscopy. Paper presented at the Sixth Applied Diamond Conference/Second Frontier Carbon Technology Joint Conference (ADC/FCT 2001), Auburn, AL, August 6-10, 2001.

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