High-Efficiency Solar Cells Based on Cu(InAl)Se[sub 2] Thin Films

Authors

S. Marsillac, Old Dominion UniversityFollow
P. D. Paulson
M. W. Haimbodi
R. W. Birkmire
W. N. Shafarman

Document Type

Article

Publication Date

2002

DOI

10.1063/1.1499990

Publication Title

Applied Physics Letters

Volume

81

Issue

7

Pages

1350-1352

Abstract

A Cu(InAl)Se₂solar cell with 16.9% efficiency is demonstrated using a Cu(InAl)Se₂thin film deposited by four-source elemental evaporation and a device structure of glass/Mo/Cu(InAl)Se₂/CdS/ZnO/indium tin oxide/(Ni/Algrid)/MgF₂. A key to high efficiency is improved adhesion between the Cu(InAl)Se₂ and the Mo back contact layer, provided by a 5-nm-thick Ga interlayer, which enabled the Cu(InAl)Se₂ to be deposited at a 530 °C substrate temperature. Film and device properties are compared to Cu(InGa)Se₂ with the same band gap of 1.16 eV. The solar cells have similar behavior, with performance limited by recombination through trap states in the space charge region in the Cu(InAl)Se₂ or Cu(InGa)Se₂ layer.

Original Publication Citation

Marsillac, S., Paulson, P.D., Haimbodi, M.W., Birkmire, R.W., & Shafarman, W.N. (2002). High-efficiency solar cells based on Cu(InAl)Se₂ thin films. Applied Physics Letters, 81(7), 1350-1352. doi: 10.1063/1.1499990

Repository Citation

Marsillac, S.; Paulson, P. D.; Haimbodi, M. W.; Birkmire, R. W.; and Shafarman, W. N., "High-Efficiency Solar Cells Based on Cu(InAl)Se[sub 2] Thin Films" (2002). Electrical & Computer Engineering Faculty Publications. 22.
https://digitalcommons.odu.edu/ece_fac_pubs/22