Document Type
Article
Publication Date
2002
DOI
10.1063/1.1499990
Publication Title
Applied Physics Letters
Volume
81
Issue
7
Pages
1350-1352
Abstract
A Cu(InAl)Se2solar cell with 16.9% efficiency is demonstrated using a Cu(InAl)Se2thin film deposited by four-source elemental evaporation and a device structure of glass/Mo/Cu(InAl)Se2/CdS/ZnO/indium tin oxide/(Ni/Algrid)/MgF2. A key to high efficiency is improved adhesion between the Cu(InAl)Se2 and the Mo back contact layer, provided by a 5-nm-thick Ga interlayer, which enabled the Cu(InAl)Se2 to be deposited at a 530 °C substrate temperature. Film and device properties are compared to Cu(InGa)Se2 with the same band gap of 1.16 eV. The solar cells have similar behavior, with performance limited by recombination through trap states in the space charge region in the Cu(InAl)Se2 or Cu(InGa)Se2 layer.
Original Publication Citation
Marsillac, S., Paulson, P.D., Haimbodi, M.W., Birkmire, R.W., & Shafarman, W.N. (2002). High-efficiency solar cells based on Cu(InAl)Se2 thin films. Applied Physics Letters, 81(7), 1350-1352. doi: 10.1063/1.1499990
Repository Citation
Marsillac, S.; Paulson, P. D.; Haimbodi, M. W.; Birkmire, R. W.; and Shafarman, W. N., "High-Efficiency Solar Cells Based on Cu(InAl)Se[sub 2] Thin Films" (2002). Electrical & Computer Engineering Faculty Publications. 22.
https://digitalcommons.odu.edu/ece_fac_pubs/22
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