Document Type

Article

Publication Date

1986

DOI

10.1103/PhysRevLett.56.155

Publication Title

Physical Review Letters

Volume

56

Issue

2

Pages

155-158

Abstract

Molecular-dynamics simulations and in situ experimental observations of the melting and equilibrium structure of the crystalline Si(100)-melt interface are described. The equilibrium interface is structured, exhibiting facets established on (111) planes.

Comments

© 1986 The American Physical Society.

"Yes, the author or the author's employer may use all or part of the APS published article, including the APS-prepared version (e.g., the PDF from the online journal) without revision or modification, on the author's or employer's website as long as a fee is not charged. If a fee is charged, then APS permission must be sought. In all cases, the appropriate bibliographic citation and notice of the APS copyright must be included."

Original Publication Citation

Landman, U., Luedtke, W. D., Barnett, R. N., Cleveland, C. L., Ribarsky, M. W., Arnold, E., . . . Khan, B. (1986). Faceting at the silicon (100) crystal-melt interface: Theory and experiment. Physical Review Letters, 56(2), 155-158. doi:10.1103/PhysRevLett.56.155

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