Document Type
Article
Publication Date
1986
DOI
10.1103/PhysRevLett.56.155
Publication Title
Physical Review Letters
Volume
56
Issue
2
Pages
155-158
Abstract
Molecular-dynamics simulations and in situ experimental observations of the melting and equilibrium structure of the crystalline Si(100)-melt interface are described. The equilibrium interface is structured, exhibiting facets established on (111) planes.
Original Publication Citation
Landman, U., Luedtke, W. D., Barnett, R. N., Cleveland, C. L., Ribarsky, M. W., Arnold, E., . . . Khan, B. (1986). Faceting at the silicon (100) crystal-melt interface: Theory and experiment. Physical Review Letters, 56(2), 155-158. doi:10.1103/PhysRevLett.56.155
Repository Citation
Landman, Uzi; Luedtke, W.D.; Barnett, R.N.; Cleveland, C.L.; Ribarsky, M.W.; Arnold, Emil; Ramesh, S.; Baumgart, H.; Martinez, A.; and Khan, B., "Faceting at the Silicon (100) Crystal-Melt Interface: Theory and Experiment" (1986). Electrical & Computer Engineering Faculty Publications. 244.
https://digitalcommons.odu.edu/ece_fac_pubs/244
Comments
© 1986 The American Physical Society.
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