Document Type

Abstract

Publication Date

2025

Publication Title

ALD/ALE 2025 Session AA-TuP: ALD Applications Poster Session Abstract Book

Pages

14

Conference Name

AVS 25th International Conference on Atomic Layer Deposition, June 22-25, 2025, Jeru Island, South Korea

Abstract

Inherently the synthesis of semiconducting materials by Atomic Layer Deposition ALD produces only intrinsic undoped films which require the introduction of small amounts of impurities for doping to change them into extrinsic semiconductors. Apart from various in-situ diffusion doping techniques like delta doping during the ALD process, post deposition doping by ion implantation affords the best control of dose and doping profile. The present study investigates the impact of 180 keV Cr+ ion implantation on the properties of semiconducting ALD lead chalcogenide thin films to improve their thermoelectric figure of merit. The implantation was accomplished with 180 keV Chromium ions at a given fluence of 5 × 10¹⁵ ions cm−² to reach a desired 1% Cr doping level. The energy of the incident ions was tuned using stopping and range of ions in matter (SRIM) simulations to produce an implant peak around the projected range centered on the ALD film thickness. The thermoelectric PbTe thin films have been synthesized on silicon substrates covered with native oxide by ALD using lead (II)bis(2,2,6,6-tetramethyl-3,5-heptanedionato) (Pb(C₁₁H₁₉O₂)₂), and (trimethylsilyl) telluride ((Me₃Si)₂Te) as ALD precursors for lead, and tellurium and Nitrogen as the carrier and purge gas. The Si native oxide surface was functionalized before ALD PbTe thin film deposition to ensure reproducible chemisorption of the ALD precursor compounds. The growth temperature during ALD was varied over a range from 130°C to 170°C. The Lead precursor was volatilized at a temperature of 170 °C and the Tellurium precursor was heated at 45 °C. The chamber base pressure was kept at 500 mTorr. Several physical characterization techniques among them SEM and EDS have been employed to determine the ALD PbTe thin film characteristics before and after Chromium ion implantation. X-ray diffraction analysis reveals that the films exhibit a polycrystalline structure with simple cubic crystallites. Atomic force microscopy analysis was employed to determine the surface properties of the films, including surface topology, root mean square (RMS) roughness, grain height, and average size. For the electrical characterization we report the effects of the ion implantation on the resistivity ρ(T) as a function of temperature, the electrical conductivity, the Hall mobility, and the Seebeck coefficient.

Comments

Abstract number AA-TuP-83

Rights

© 2025 American Vacuum Society. All rights reserved.

Included with the kind written permission of the copyright holder.

Original Publication Citation

Cong, H., Poterie, C., Barbot, J. F., & Baumgart, H. (2025). The impact of chromium ion implantation on ALD lead chalcogenide thin films. AVS 25th International Conference on Atomic Layer Deposition (ALD 2025), Jeju Island, South Korea. https://www.avssymposium.org/ALD2025/Sessions/Schedule/83215

ORCID

0009-0000-6612-5138 (Cong), 0000-0001-8272-2151 (Baumgart)

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