Document Type

Article

Publication Date

2006

DOI

10.2961/jlmn.2006.02.005

Publication Title

Journal of Laser Micro/Nanoengineering

Volume

1

Issue

2

Pages

111-114

Abstract

Pulsed laser deposition is used to fabricate multilayered Ge quantum-dot photodetector on Si(100). Growth was studied by reflection high-energy electron diffraction and atomic force microscopy. The difference in the current values in dark and illumination conditions was used to measure the device sensitivity to radiation. Spectral responsivity measurements reveal a peak around 2 μm, with responsity that increases three orders of magnitude as bias increases from 0.5 to 3.5 V.

Original Publication Citation

Hegazy, M., Refaat, T., Abedin, N., & Elsayed-Ali, H. (2006). Quantum-dot infrared photodetector fabricated by pulsed laser deposition technique. Journal of Laser Micro Nanoengineering, 1(2), 111-114. doi: 10.2961/jlmn.2006.02.005

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