Document Type

Article

Publication Date

2015

DOI

10.1063/1.4905702

Publication Title

AIP Advances

Volume

5

Issue

1

Pages

1-12

Abstract

The Inverse Piezoelectric Effect (IPE) is thought to contribute to possible device failure of GaN High Electron Mobility Transistors (HEMTs). Here we focus on a simulation study to probe the possible mitigation of the IPE by reducing the internal electric fields and related elastic energy through the use of high-k materials. Inclusion of a HfO2 "cap layer" above the AlGaN barrier particularly with a partial mesa structure is shown to have potential advantages. Simulations reveal even greater reductions in the internal electric fields by using "field plates" in concert with high-k oxides

Original Publication Citation

Nagulapally, D., Joshi, R. P., & Pradhan, A. (2015). Simulation study of HEMT structures with HfO2 cap layer for mitigating inverse piezoelectric effect related device failures. AIP Advances, 5(1), 1-12. doi: 10.1063/1.4905702

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