Low Temperature Epitaxial Growth of Ge Quantum Dot on Si (100) - (2×1) by Femtosecond Laser Excitation

Authors

Ali Oguz Er, Old Dominion University
Wei Ren, Old Dominion University
Hani E. Elsayed-Ali, Old Dominion UniversityFollow

Document Type

Article

Publication Date

2011

DOI

10.1063/1.3537813

Publication Title

Applied Physics Letters

Volume

98

Issue

1

Pages

013108 (1-3)

Abstract

Low temperature epitaxy of Ge quantum dots on Si (100) - (2×1) by femtosecond pulsed laser deposition under femtosecond laser excitation was investigated. Reflection high-energy electron diffraction and atomic force microscopy were used to analyze the growth mode and morphology. Epitaxial growth was achieved at ∼70 °C by using femtosecond laser excitation of the substrate. A purely electronic mechanism of enhanced surface diffusion of the Ge adatoms is proposed. © 2011 American Institute of Physics. [doi:10.1063/1.3537813]

Original Publication Citation

Er, A. O., Ren, W., & Elsayed-Ali, H. E. (2011). Low temperature epitaxial growth of Ge quantum dot on Si (100) - (2×1) by femtosecond laser excitation. Applied Physics Letters, 98(1), 013108. doi:10.1063/1.3537813

Repository Citation

Er, Ali Oguz; Ren, Wei; and Elsayed-Ali, Hani E., "Low Temperature Epitaxial Growth of Ge Quantum Dot on Si (100) - (2×1) by Femtosecond Laser Excitation" (2011). Electrical & Computer Engineering Faculty Publications. 97.
https://digitalcommons.odu.edu/ece_fac_pubs/97