Date of Award
Spring 5-1977
Document Type
Thesis
Degree Name
Master of Science (MS)
Committee Director
Jacob Becher
Committee Member
Forrest B. Clay, Jr.
Committee Member
James L. Cox, Jr.
Committee Member
Gary Copeland
Call Number for Print
Special Collections LD4331.P48S54
Abstract
The characteristics of n and p-channel MOSFETs have been investigated while irradiated with electron radiation from Strontium 9Ø. The drain current vs. gate voltage of the p-channel MOSFET and the threshold voltage changes in n and p-channel MOSFETs have been studied with and without aluminum shielding. The switching characteristics and threshold voltage changes of COS/MOS dual input NAND gates have been investigated while exposed to electron radiation. Various methods of annealing the radiation damage to these devices is discussed.
Rights
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DOI
10.25777/fd97-7b56
Recommended Citation
Skeldon, Mark D..
"The Effects of Electron Irradiation on MOSFETs"
(1977). Master of Science (MS), Thesis, , Old Dominion University, DOI: 10.25777/fd97-7b56
https://digitalcommons.odu.edu/physics_etds/195