Date of Award

Spring 5-1977

Document Type


Degree Name

Master of Science (MS)

Committee Director

Jacob Becher

Committee Member

Forrest B. Clay, Jr.

Committee Member

James L. Cox, Jr.

Committee Member

Gary Copeland

Call Number for Print

Special Collections LD4331.P48S54


The characteristics of n and p-channel MOSFETs have been investigated while irradiated with electron radiation from Strontium 9Ø. The drain current vs. gate voltage of the p-channel MOSFET and the threshold voltage changes in n and p-channel MOSFETs have been studied with and without aluminum shielding. The switching characteristics and threshold voltage changes of COS/MOS dual input NAND gates have been investigated while exposed to electron radiation. Various methods of annealing the radiation damage to these devices is discussed.


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