Document Type

Article

Publication Date

1995

Publication Title

Review of Scientific Instruments

Volume

66

Issue

4

Pages

2960-2966

DOI

10.1063/1.1145583

Abstract

The electric field dependence of the absorption coefficient in semi‐insulating GaAs at the absorption edge was measured in a high‐voltage pulsed experiment. Pulse duration was kept below 50 ns in order to avoid thermal effects. A GaAs laser diode was used as a probe light source with wavelength varied from 902 to 911 nm. For fields up to 40 kV/cm the absorption coefficient increased from 3 to 17 cm−1 at 902 nm, with smaller absolute increases evident at the longer wavelengths. Calculation from theory was consistent with this behavior. The spatial variation of the electric field was also recorded with a CCD camera. This method was used as a diagnostic technique to study the field distribution during the switching cycle of a high‐power photoconductive switch. The described system could be used as a simple electric field probe with temporal resolution of 100 ps, or as a field mapping system with spatial resolution approaching 1 μm.

Comments

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Review of Scientific Instruments 66 (4) 2960-2966 and may be found at https://doi.org/10.1063/1.1145583.

Original Publication Citation

Peterkin, F. E., Block, R., & Schoenbach, K. H. (1995). Electric field mapping system with nanosecond temporal resolution. Review of Scientific Intruments, 66(4), 2960-2966. doi:10.1063/1.1145583

ORCID

0000-0001-7867-7773 (Schoenbach)

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