Document Type

Article

Publication Date

1995

Publication Title

Journal of Applied Physics

Volume

77

Issue

10

Pages

5208-5214

DOI

10.1063/1.359269

Abstract

We report on the intensity dependent supralinear photoconductivity in GaAs:Si:Cu material. The results of our measurements show that the effective carrier lifetime can change over two orders of magnitude with variations in the intensity of the optical excitation. A threshold intensity level has been observed and can be related to the occupancy of the deep copper level. Numerical simulations have also been carried out to analyze the trapping dynamics. The intensity dependent lifetimes obtained from the simulations match the experimental data very well. Finally, based on the nonlinear intensity dependence of the effective lifetimes, a possible low‐energy phototransistor application for the GaAs:Cu material system is presented.

Comments

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Applied Physics 77 (10) 5298-5214 and may be found at https://doi.org/10.1063/1.359269.

Original Publication Citation

Schoenbach, K. H., Joshi, R. P., Peterkin, F., Druce, R. L., S., M. M., H., S. K., . . . T., K. S. (1995). Supralinear photoconductivity of copper doped semi‐insulating gallium arsenide. Journal of Applied Physics, 77(10), 5208-5214. doi:10.1063/1.359269

ORCID

0000-0001-7867-7773 (Schoenbach)

Download

Share

COinS