Document Type

Article

Publication Date

1992

Publication Title

Journal of Applied Physics

Volume

72

Issue

10

Pages

4781-4787

DOI

10.1063/1.352090

Abstract

Experimental studies on a vertical metal‐diamond‐silicon switch structure have been conducted for potential pulsed power applications. Both the dc current‐voltage characteristics and the transient switching response have been measured for a range of voltages. With a 1 μm diamond film, the switch has been seen to withstand electric fields up to 1.8 MV/cm. Our results show a polarity dependence which can be associated with current injection at the asymmetric contacts. Polarity effects were also observed in the presence of e‐beam excitation, and arise due to nonuniform carrier generation near the diamond‐silicon interface. Our switching transients were seen to follow the shape of the e‐beam for a negative bias at the silicon substrate. For positive voltage values exceeding about 80 V however, the switch is seen to go into a persistent‐photocurrent mode. This effect is a result of free carrier trapping within diamond and is enhanced by the double injection process.

Comments

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Applied Physics 72 (10) 4781-4787 and may be found at https://doi.org/10.1063/1.352090.

Original Publication Citation

Joshi, R. P., Kennedy, M. K., Schoenbach, K. H., & Hofer, W. W. (1992). Studies of high field conduction in diamond for electron beam controlled switching. Journal of Applied Physics, 72(10), 4781-4787. doi:10.1063/1.352090

ORCID

0000-0001-7867-7773 (Schoenbach)

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