Document Type
Article
Publication Date
1988
Publication Title
Journal of Applied Physics
Volume
64
Issue
2
Pages
913-917
DOI
10.1063/1.341893
Abstract
Turn‐on and turn‐off of bulk semiconductor switches, based on excitation and quenching of photoconductivity, respectively, have been demonstrated with copper‐doped II‐VI semiconductor crystals. The increase of the conductivity (turn‐on) was realized with a xenon flash‐lamp pulse of 15‐μs duration. A reduction of the conductivity (turn‐off) was obtained by irradiating the samples with IR light using an 8‐ns Nd:YAG laser pulse (YAG denotes yttrium aluminum garnet). For turn‐on in CdS:Cu the conductivity follows the xenon flash excitation. The turn‐off time constant was 250 ns. ZnS and ZnSe crystals showed a slower response. A memory effect for the IR light was observed.
Original Publication Citation
Germer, R. K. F., Schoenbach, K. H., & Pronko, S. G. E. (1988). A bulk optically controlled semiconductor switch. Journal of Applied Physics, 64(2), 913-917. doi:10.1063/1.341893
Repository Citation
Germer, Rudolf K.F.; Schoenbach, Karl H.; and Pronko, Stephen G.E., "A Bulk Optically Controlled Semiconductor Switch" (1988). Bioelectrics Publications. 267.
https://digitalcommons.odu.edu/bioelectrics_pubs/267
ORCID
0000-0001-7867-7773 (Schoenbach)
Included in
Electrical and Electronics Commons, Electronic Devices and Semiconductor Manufacturing Commons
Comments
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Applied Physics 64 (2) 913-917 and may be found at https://doi.org/10.1063/1.341893%20.