Document Type

Article

Publication Date

1988

Publication Title

Journal of Applied Physics

Volume

64

Issue

2

Pages

913-917

DOI

10.1063/1.341893

Abstract

Turn‐on and turn‐off of bulk semiconductor switches, based on excitation and quenching of photoconductivity, respectively, have been demonstrated with copper‐doped II‐VI semiconductor crystals. The increase of the conductivity (turn‐on) was realized with a xenon flash‐lamp pulse of 15‐μs duration. A reduction of the conductivity (turn‐off) was obtained by irradiating the samples with IR light using an 8‐ns Nd:YAG laser pulse (YAG denotes yttrium aluminum garnet). For turn‐on in CdS:Cu the conductivity follows the xenon flash excitation. The turn‐off time constant was 250 ns. ZnS and ZnSe crystals showed a slower response. A memory effect for the IR light was observed.

Comments

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Applied Physics 64 (2) 913-917 and may be found at https://doi.org/10.1063/1.341893%20.

Original Publication Citation

Germer, R. K. F., Schoenbach, K. H., & Pronko, S. G. E. (1988). A bulk optically controlled semiconductor switch. Journal of Applied Physics, 64(2), 913-917. doi:10.1063/1.341893

ORCID

0000-0001-7867-7773 (Schoenbach)

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