Date of Award

Summer 2005

Document Type

Thesis

Degree Name

Master of Science (MS)

Department

Electrical & Computer Engineering

Program/Concentration

Electrical Engineering

Committee Director

Sacharia Albin

Committee Member

Mohamed Karim

Committee Member

Vijayan Asari

Call Number for Print

Special Collections LD4331.E55 A435 2005

Abstract

Recent inventions of a silicon Raman laser and a high speed photon modulator might motivate integration of electronic and photonic active devices on the same silicon chip. Passive photonic devices in silicon such as waveguides, couplers and splitters have been developed. Photonic devices must be compatible with standard silicon CMOS fabrication processing in order to achieve the integration. Since CMOS fabrication involves a myriad of process steps, it is important to study the effect of processing on photonic devices. Oxidation and etching, two fundamental processes in silicon technology, are utilized in this thesis to model their effects on silicon photonic crystals. Triangular and square lattices made of both air holes and silicon pillars are employed. The photonic band structures of these lattices are analyzed before and after oxidation and oxide etching. It is found that the width of the band gap and the midgap frequency can be varied systematically using oxidation and etching. Another interesting result is that the band gap tuning does not follow the same path for both oxidation and etching. This is a direct result of the change in silicon filling ratio during oxidation, which is unaffected by oxide etching. Thus the results of this thesis show a very flexible method in tuning the band gap of silicon photonic crystals.

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DOI

10.25777/bvsd-nq38

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