Document Type

Article

Publication Date

2003

DOI

10.1063/1.1622117

Publication Title

Journal of Applied Physics

Volume

94

Issue

10

Pages

6945-6948

Abstract

γ-In[sub 2]Se[sub 3] thin film are deposited for various substrate temperatures in the range of 523–673 K. This study shows that at 573 and 673 K the thin films are well crystallized with grains aligned along the c axis. Between these temperatures, a domain of instability appears where the γ-In[sub 2]Se[sub 3] thin films have a randomly orientation and the c-lattice parameter increases. The presence of the metastable phase κ-In[sub 2]Se[sub 3], during the growth, can explain the existence of this domain of instability. The insertion of Zn during the preparation process allows us to stabilize the phase κ at room temperature which confirms our hypothesis that the presence of κ-In[sub 2]Se[sub 3] perturbs the crystallization of γ-In[sub 2]Se[sub 3]. The increase of the c-lattice parameter can be explain by the fact that κ-In[sub 2]Se[sub 3] has a larger unit cell than γ-In[sub 2]Se[sub 3] or by a competition during the growth between the grains of both phases which could generate constraints along the c axis. During the cooling, the κ phase disappears in favor of the γ phase.

Original Publication Citation

Amory, C., Bernede, J.C., & Marsillac, S. (2003). Study of a growth instability of γ-In[sub 2]Se[sub 3]. Journal of Applied Physics, 94(10), 6945-6948. doi: 10.1063/1.1622117

Download

Share

COinS