Document Type
Article
Publication Date
5-2003
DOI
10.1063/1.1565823
Publication Title
Journal of Applied Physics
Volume
93
Issue
9
Pages
5456-5459
Abstract
The evolution of the band structure of β-In2 S3−3x O3x (BISO) thin films grown by physical vapor deposition, with composition x, is investigated using x-ray photoelectron spectroscopy. It is shown that the energy difference between the valence-band level and the Fermi level remains nearly constant as the optical band gap of the films increases. As a consequence, the difference between the conduction band level and the Fermi level increases as much as the optical band gap of the films. The calculation of the electronic affinity [ ] of the BISO thin films shows that it decreases linearly from 4.65 to 3.85 eV when x varies from 0 to 0.14. This will facilitate fabrication of efficient Cu(InGa)Se2-based solar cells having different absorber layer band gap.
Original Publication Citation
Barreau, N., Marsillac, S., Bernede, J.C., & Assmann, L. (2003). Evolution of the band structure of β-In2 S3−3x O3x buffer layer with its oxygen content. Journal of Applied Physics, 93(9), 5456-5459. doi: 10.1063/1.1565823
Repository Citation
Barreau, N.; Marsillac, S.; Bernède, J. C.; and Assmann, L., "Evolution of the Band Structure of β-In2 S3−3x O3x Buffer Layer With Its Oxygen Content" (2003). Electrical & Computer Engineering Faculty Publications. 9.
https://digitalcommons.odu.edu/ece_fac_pubs/9