Atomic Layer Deposition of Nanolaminate Structures of Alternating PbTe and PbSe Thermoelectric Films
Document Type
Article
Publication Date
2014
DOI
10.1149/2.014406jss
Publication Title
ECS Journal of Solid State Science and Technology
Volume
3
Issue
6
Pages
P207-P212
Abstract
For this study PbTe and PbSe thin film nanolaminates have been prepared on silicon substrates with native oxide by Atomic Layer Deposition (ALD) using lead(II)bis(2,2,6,6-tetramethyl-3,5-heptanedionato) (Pb(C11H19O2)(2), (trimethylsilyl) telluride ((Me3Si)2Te) and bis-(triethyl silyl) selane ((Et3Si)2Se) as ALD precursors for lead, tellurium and selenium. The experimental evidence revealed the ALD growth of lead telluride and lead selenide followed the Vollmer-Weber island growth mode. We found a strong dependence of the nucleation process on the temperature. In this paper, we present the optimized conditions for growing PbTe and PbSe thin film nanolaminates within the ALD process window range of 170 degrees C to 210 degrees C and discuss an early nano-scale PbTe/PbSe bilayer structure. Results of various physical characterizations techniques and analysis are reported.
Original Publication Citation
Zhang, K., Pillai, A. D. R., Bollenbach, K., Nminibapiel, D., Cao, W., Baumgart, H., . . . Kochergin, V. (2014). Atomic layer deposition of nanolaminate structures of alternating PbTe and PbSe thermoelectric films. ECS Journal of Solid State Science and Technology, 3(6), P207-P212. doi:10.1149/2.014406jss
Repository Citation
Zhang, K.; Ramalingom Pillai, A. D.; Bollenbach, K.; Nminibapiel, D.; Cao, W.; and Baumgart, H., "Atomic Layer Deposition of Nanolaminate Structures of Alternating PbTe and PbSe Thermoelectric Films" (2014). Electrical & Computer Engineering Faculty Publications. 147.
https://digitalcommons.odu.edu/ece_fac_pubs/147
Comments
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