Polarization of Bi2Te3 Thin Film in a Floating-Gate Capacitor Structure

Authors

Hui Yuan
Kai Zhang
Haitao Li
Hao Zhu
John E. Bonevich
Helmut Baumgart, Old Dominion UniversityFollow
Curt A. Richter
Qiliang Li

Document Type

Article

Publication Date

2014

DOI

10.1063/1.4904003

Publication Title

Applied Physics Letters

Volume

105

Issue

23

Pages

233505 (1-5)

Abstract

Metal-Oxide-Semiconductor (MOS) capacitors with Bi₂Te₃ thin film sandwiched and embedded inside the oxide layer have been fabricated and studied. The capacitors exhibit ferroelectric-like hysteresis which is a result of the robust, reversible polarization of the Bi₂Te₃ thin film while the gate voltage sweeps. The temperature-dependent capacitance measurement indicates that the activation energy is about 0.33 eV for separating the electron and hole pairs in the bulk of Bi₂Te₃, and driving them to either the top or bottom surface of the thin film. Because of the fast polarization speed, potentially excellent endurance, and the complementary metal - oxide - semiconductor compatibility, the Bi₂Te₃ embedded MOS structures are very interesting for memory application. © 2014 AIP Publishing LLC.

Comments

This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC-BY) license.

https://creativecommons.org/licenses/by/4.0/

Original Publication Citation

Yuan, H., Zhang, K., Li, H., Zhu, H., Bonevich, J. E., Baumgart, H., ... & Li, Q. (2014). Polarization of Bi₂Te₃ thin film in a floating-gate capacitor structure. Applied Physics Letters, 105(23), 233505.

Repository Citation

Yuan, Hui; Zhang, Kai; Li, Haitao; Zhu, Hao; Bonevich, John E.; Baumgart, Helmut; Richter, Curt A.; and Li, Qiliang, "Polarization of Bi2Te3 Thin Film in a Floating-Gate Capacitor Structure" (2014). Electrical & Computer Engineering Faculty Publications. 76.
https://digitalcommons.odu.edu/ece_fac_pubs/76