Document Type
Article
Publication Date
2014
DOI
10.1149/2.006406jss
Publication Title
ECS Journal of Solid State Science and Technology
Volume
3
Issue
6
Pages
N89-N94
Abstract
Among the many vanadium suboxides and different stoichiometries, VO2 has received considerable attention due to its remarkable metal-insulator transition (MIT) behavior, which causes a significant reversible change in its electrical and optical properties occurring across the phase transition at 67°C. The initially amorphous VO2 thin films were fabricated by the emerging, Atomic Layer Deposition (ALD) technique with (tetrakis[ethylmethylamino]vanadium) {V(NEtMe)4} as precursor and H2O vapor as oxidation agent. For benchmarking we have also used the RF Magnetron Sputtering technique to deposit metallic vanadium thin films, which were later oxidized during furnace annealing. Post annealing of the as-deposited ALD films was performed in order to obtain the technologically important form of crystallized VO2 thin films using furnace annealing. All film depositions were carried out on native oxide covered (100) Si substrates. The conditions for successful furnace annealing are reported in terms of temperature and annealing gas composition and the physical characterization results are presented. (C) The Author(s) 2014. Published by ECS.
Original Publication Citation
Tangirala, M., Zhang, K., Nminibapiel, D., Pallem, V., Dussarrat, C., Cao, W., . . . Baumgart, H. (2014). Physical analysis of VO2 films grown by atomic layer deposition and RF magnetron sputtering. ECS Journal of Solid State Science and Technology, 3(6), N89-N94. doi:10.1149/2.006406jss
Repository Citation
Tangirala, Madhavi; Zhang, Kai; Nminibapiel, David; Pallem, Venkateswara; Dussarrat, Christian; Cao, Wei; Adam, Thomas N.; Johnson, Corbet S.; Elsayed-Ali, Hani E.; and Baumgart, Helmut, "Physical Analysis of VO2 Films Grown by Atomic Layer Deposition and RF Magnetron Sputtering" (2014). Electrical & Computer Engineering Faculty Publications. 153.
https://digitalcommons.odu.edu/ece_fac_pubs/153
ORCID
0000-0002-6200-7035 (Nminibapiel), 0000-0002-1329-5018 (Elsayed-Ali), 0000-0001-8272-2151 (Baungart)
Included in
Electrical and Computer Engineering Commons, Materials Science and Engineering Commons, Physics Commons
Comments
This is an open access article distributed under the terms of the Creative Commons Attribution Non-Commercial No Derivatives 4.0 License, which permits non-commercial reuse, distribution, and reproduction in any medium, provided the original work is not changed in any way and is properly cited.