Document Type

Article

Publication Date

1982

DOI

10.1063/1.92998

Publication Title

Applied Physics Letters

Volume

40

Issue

12

Pages

1043-1045

Abstract

Extensive seeded epitaxial growth of crystalline Si over SiO2 was achieved by an oscillatory regrowth method applied to rectangular Si pads recessed into a thick SiO2 film. Narrow (≃5 μm) via holes linked the pads with the bulk (100) Si substrate. Oriented single crystals propagated as far as 500 μm from the seeding area, following the long term advance of a scanned focused laser beam.

Comments

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP publishing. The article appeared in Applied Physics Letters, Volume 40, Issue 12, Pages 1043-1045 and may be found at https://doi.org/10.1063/1.92998.

Original Publication Citation

Celler, G. K., Trimble, L. E., Ng, K. K., Leamy, H. J., & Baumgart, H. (1982). Seeded oscillatory growth of Si over SiO2 by cw laser irradiation. Applied Physics Letters, 40(12), 1043-1045. doi:10.1063/1.92998

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