Document Type
Article
Publication Date
1982
DOI
10.1063/1.92998
Publication Title
Applied Physics Letters
Volume
40
Issue
12
Pages
1043-1045
Abstract
Extensive seeded epitaxial growth of crystalline Si over SiO2 was achieved by an oscillatory regrowth method applied to rectangular Si pads recessed into a thick SiO2 film. Narrow (≃5 μm) via holes linked the pads with the bulk (100) Si substrate. Oriented single crystals propagated as far as 500 μm from the seeding area, following the long term advance of a scanned focused laser beam.
Original Publication Citation
Celler, G. K., Trimble, L. E., Ng, K. K., Leamy, H. J., & Baumgart, H. (1982). Seeded oscillatory growth of Si over SiO2 by cw laser irradiation. Applied Physics Letters, 40(12), 1043-1045. doi:10.1063/1.92998
Repository Citation
Celler, G.K.; Trimble, L. E.; Ng, K.K.; Leamy, H.J.; and Baumgart, H., "Seeded Oscillatory Growth of Si Over SiO² by cw Laser Irradiation" (1982). Electrical & Computer Engineering Faculty Publications. 247.
https://digitalcommons.odu.edu/ece_fac_pubs/247
Comments
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP publishing. The article appeared in Applied Physics Letters, Volume 40, Issue 12, Pages 1043-1045 and may be found at https://doi.org/10.1063/1.92998.