Document Type
Article
Publication Date
1982
DOI
10.1063/1.331432
Publication Title
Journal of Applied Physics
Volume
53
Issue
8
Pages
5904-5907
Abstract
Depth profiles of the electrical quality of ion implanted and cw laser annealed p-n junctions in silicon are obtained for the first time by secondary ion mass spectroscopy. A comparison with the crystallographic properties of the surface and the junction as observed by Nomarski optical microscopy as well as cross-sectional and plan view transmission electron microscopy is made. Samples containing slip dislocations show better insulation and a lower reverse bias current across the p-n junction as compared to samples with a perfect surface in agreement with current-voltage characteristics. Small dislocation loops located at the junction are found to degrade the junction quality.
Original Publication Citation
Maier, M., Bimberg, D., Fernholz, G., Baumgart, H., & Phillipp, F. (1982). Electrical and structural properties of p-n junctions in cw laser annealed silicon. Journal of Applied Physics, 53(8), 5904-5907. doi:10.1063/1.331432
Repository Citation
Maier, M.; Bimberg, D.; Fernholz, G.; Baumgart, H.; and Phillipp, F., "Electrical and Structural Properties of p-n Junctions in cw Laser Annealed Silicon" (1982). Electrical & Computer Engineering Faculty Publications. 243.
https://digitalcommons.odu.edu/ece_fac_pubs/243
Comments
© 1982 American Institute of Physics
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP publishing. This article appeared in Journal of Applied Physics, Volume 53, Issue 8, Pages 5904-5907, and may be found at https://doi.org/10.1063/1.331432.