Document Type

Article

Publication Date

1982

DOI

10.1063/1.331432

Publication Title

Journal of Applied Physics

Volume

53

Issue

8

Pages

5904-5907

Abstract

Depth profiles of the electrical quality of ion implanted and cw laser annealed p-n junctions in silicon are obtained for the first time by secondary ion mass spectroscopy. A comparison with the crystallographic properties of the surface and the junction as observed by Nomarski optical microscopy as well as cross-sectional and plan view transmission electron microscopy is made. Samples containing slip dislocations show better insulation and a lower reverse bias current across the p-n junction as compared to samples with a perfect surface in agreement with current-voltage characteristics. Small dislocation loops located at the junction are found to degrade the junction quality.

Comments

© 1982 American Institute of Physics

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP publishing. This article appeared in Journal of Applied Physics, Volume 53, Issue 8, Pages 5904-5907, and may be found at https://doi.org/10.1063/1.331432.

Original Publication Citation

Maier, M., Bimberg, D., Fernholz, G., Baumgart, H., & Phillipp, F. (1982). Electrical and structural properties of p-n junctions in cw laser annealed silicon. Journal of Applied Physics, 53(8), 5904-5907. doi:10.1063/1.331432

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