Document Type

Article

Publication Date

1981

DOI

10.1063/1.92268

Publication Title

Applied Physics Letters

Volume

38

Issue

2

Pages

95-97

Abstract

High-voltage electron microscopy (HVEM) has been used for the investigation of the defect structure in cw laser-annealed silicon. We report for the first time a (HVEM) analysis of the formation processes involved in the nucleation and glide of slip dislocations during epitaxial regrowth by cw laser annealing of ion-implantation damaged silicon layers. Based on the combined optical and HVEM observations a model of the dislocation generation and glide processes is presented.

Comments

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP publishing. This article appeared in Applied Physics Letters Volume 38, Issue 2, Pages 95-97 and may be found at https://doi.org/10.1063/1.92268.

Original Publication Citation

Baumgart, H., Phillipp, F., Rozgonyi, G. A., & Gösele, U. (1981). Slip dislocation formation during continuous wave laser annealing of silicon. Applied Physics Letters, 38(2), 95-97. doi:10.1063/1.92268

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