Document Type
Article
Publication Date
1981
DOI
10.1063/1.92268
Publication Title
Applied Physics Letters
Volume
38
Issue
2
Pages
95-97
Abstract
High-voltage electron microscopy (HVEM) has been used for the investigation of the defect structure in cw laser-annealed silicon. We report for the first time a (HVEM) analysis of the formation processes involved in the nucleation and glide of slip dislocations during epitaxial regrowth by cw laser annealing of ion-implantation damaged silicon layers. Based on the combined optical and HVEM observations a model of the dislocation generation and glide processes is presented.
Original Publication Citation
Baumgart, H., Phillipp, F., Rozgonyi, G. A., & Gösele, U. (1981). Slip dislocation formation during continuous wave laser annealing of silicon. Applied Physics Letters, 38(2), 95-97. doi:10.1063/1.92268
Repository Citation
Baumgart, Helmut, "Slip Dislocation Formation During Continuous Wave Laser Annealing of Silicon" (1981). Electrical & Computer Engineering Faculty Publications. 277.
https://digitalcommons.odu.edu/ece_fac_pubs/277
Comments
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP publishing. This article appeared in Applied Physics Letters Volume 38, Issue 2, Pages 95-97 and may be found at https://doi.org/10.1063/1.92268.