Document Type
Article
Publication Date
1982
DOI
10.1063/1.93207
Publication Title
Applied Physics Letters
Volume
40
Issue
8
Pages
729-731
Abstract
Morphology changes introduced by picosecond laser pulses at λ = 532 nm and 355 nm in (111) and (100) silicon samples are studied by means of optical and high-voltage electron microscopy. Depending on energy fluence, orientation and wavelength, amorphous or highly defective regions may be created. From an analysis of damage thresholds and damage depth distributions it is concluded that melting and energy confinement precedes the formation of the structural changes.
Original Publication Citation
Merkle, K. L., Baumgart, H., Uebbing, R. H., & Phillipp, F. (1982). Picosecond laser pulse irradiation of crystalline silicon. Applied Physics Letters, 40(8), 729-731. doi:10.1063/1.93207
Repository Citation
Merkle, K. L.; Baumgart, H.; Uebbing, R.H.; and Phillipp, F., "Picosecond Laser Pulse Irradiation of Crystalline Silicon" (1982). Electrical & Computer Engineering Faculty Publications. 240.
https://digitalcommons.odu.edu/ece_fac_pubs/240
Comments
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP publishing. This article appeared in Applied Physics Letters, Volume 10, Issue 8, Pages 729-731, and may be found at https://doi.org/10.1063/1.93207.